| Campo DC | Valor | Lengua/Idioma |
|---|
| dc.contributor.author | Amato, Angélica Amorim | pt_BR |
| dc.date.accessioned | 2017-12-07T04:37:06Z | - |
| dc.date.available | 2017-12-07T04:37:06Z | - |
| dc.date.issued | 2002 | pt_BR |
| dc.identifier.citation | Rev. Bras. Ensino Fís.,v.24,n.4,p.379-382,2002 | pt_BR |
| dc.identifier.uri | http://repositorio.unb.br/handle/10482/25956 | - |
| dc.description.abstract | It is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. This result shows the explicit dependence of the transition rate on the phonon density of states and that the absorption curve of a semiconductor is modulated by the phonon structure. | pt_BR |
| dc.language.iso | en | pt_BR |
| dc.publisher | Sociedade Brasileira de Física | pt_BR |
| dc.rights | Acesso Aberto | pt_BR |
| dc.title | Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors | pt_BR |
| dc.type | Artigo | pt_BR |
| dc.identifier.doi | https://dx.doi.org/10.1590/S1806-11172002000400003 | pt_BR |
| dc.description.unidade | Em processamento | - |
| Aparece en las colecciones: | Artigos publicados em periódicos e afins
|
